Series-

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)30 V

Current - Continuous Drain (Id) @ 25°C50mA

Drive Voltage (Max Rds On, Min Rds On)20V

Rds On (Max) @ Id, Vgs300Ohm @ 100µA, 20V

Vgs(th) (Max) @ Id5V @ 10µA

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)-6.5V

Input Capacitance (Ciss) (Max) @ Vds3.5 pF @ 15 V

FET Feature-

Power Dissipation (Max)375mW

Operating Temperature-

Mounting TypeThrough Hole

Supplier Device PackageTO-72-4

Package / CaseTO-206AF, TO-72-4 Metal Can